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Neutron transmutation doping is a process in which high purity silicon is placed in a nuclear reactor where some of the silicon atoms are transmuted to stable phosphorus atoms through the reactions 14^30 Si 0^1 n ⟶ 14^31 Si 2.62  hβ^-⟶ 15^31 P After annealing to remove crystalline defects caused by the fast neutrons, the resulting semiconductor can be used in devices such as power thyristors which require a large area of a semiconductor with uniform resistivity. The thermalneutron capture cros
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